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The role of stress distribution at the film/barrier interface in formation of copper silicides

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Abstract

Silicide formation in thin Cu films subjected to thermal annealing has been investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. It is shown that the periodic stress distribution at the film/barrier interface under elevated temperatures can govern the character of copper silicide formation. The effect of barrier layer material and substrate orientation on the distribution density and shape of Cu3Si crystallites has been studied.

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Authors and Affiliations

  1. Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences, Tomsk, 634021, Russia

    A. V. Panin & A. R. Shugurov

  2. Tomsk State University, Tomsk, 634050, Russia

    I. V. Ivonin

  3. Mikran Research and Production Company, Tomsk, 634034, Russia

    Ye. V. Shesterikov

Authors
  1. A. V. Panin
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  2. A. R. Shugurov
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  3. I. V. Ivonin
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  4. Ye. V. Shesterikov
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Correspondence to A. V. Panin.

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Original Russian Text © A.V. Panin, A.R. Shugurov, I.V. Ivonin, Ye.V. Shesterikov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 118–125.

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Panin, A.V., Shugurov, A.R., Ivonin, I.V. et al. The role of stress distribution at the film/barrier interface in formation of copper silicides. Semiconductors 44, 116–122 (2010). https://doi.org/10.1134/S1063782610010203

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  • DOI: https://doi.org/10.1134/S1063782610010203

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