Abstract
Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased, the InGaN layers become transformed from being continuous in the lateral direction to the layers of separate InGaN islands. This transformation affects both the emission efficiency and the dependence of efficiency on current.
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Original Russian Text © W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.V. Sakharov, S.O. Usov, A.E. Nikolaev, D.V. Davydov, N.A. Cherkashin, A.F. Tsatsulnikov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 126–129.
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Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A. et al. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes. Semiconductors 44, 123–126 (2010). https://doi.org/10.1134/S1063782610010215
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DOI: https://doi.org/10.1134/S1063782610010215