Skip to main content
SpringerLink
Log in

Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films

  • Electrical and Optical Properties of Semiconductors
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Transparent conducting gallium-doped ZnO films are deposited on glass substrates by magnetron sputtering of conducting ceramic targets. The dependences of structural, electric, and optical characteristics of ZnO:Ga films on the substrate temperature are investigated during the deposition. Stability of resistivity of films is considered during annealing in air. It is found that the films deposited at the substrate temperature of 250°C have the lowest resistivity of 3.8 × 10−4 Ω cm, while those deposited at 200°C have the highest thermal stability.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. W. Beyer, J. Hupkes, and H. Stiebig, Thin Sol. Films 516, 147 (2007).

    Article  ADS  Google Scholar 

  2. V. Sabayev, D. Aronov, L. Oster, and G. Rosenman, Appl. Phys. Lett. 93, 144104 (2008).

    Article  ADS  Google Scholar 

  3. A. A. Serdobintseva, A. G. Veselov, and O. A. Kiryasova, Fiz. Tekh. Poluprovodn. 42, 496 (2008) [Semiconductors 42, 486 (2008)].

    Google Scholar 

  4. I. P. Kuz’mina and V. A. Nikitenko, Zink Oxide. Production and Optical Properties (Nauka, Moscow, 1984) [in Russian].

    Google Scholar 

  5. A. N. Georgobiani, Usp. Fiz. Nauk 113, 129 (1974) [Sov. Phys. Usp. 17, 424 (1974)].

    Google Scholar 

  6. T. Minami, H. Sato, H. Nanto, and S. Takata, Jpn. J. Appl. Phys. 24, L781 (1985).

    Article  ADS  Google Scholar 

  7. N. M. Sbrockey and Sh. Ganesan, III-Vs Review 17(7), 23 (2004).

    Article  Google Scholar 

  8. T. Ohgaki, N. Ohashi, H. Kakemoto, S. Wada, Y. Adachi, H. Haneda, and T. Tsurumi, J. Appl. Phys. 95, 1961 (2003).

    Article  ADS  Google Scholar 

  9. N. R. Aghamalyan, E. A. Kafadaryan, R. K. Hovsepyan, and S. I. Petrosyan, Semicond. Sci. Technol. 20, 80 (2005).

    Article  ADS  Google Scholar 

  10. O. A. Novodvorskii, L. S. Gorbatenko, V. Ya. Panchenko, O. D. Khramova, E. A. Cherebylo, K. Ventsel’, I. V. Barta, V. T. Bublik, and K. D. Shcherbachev, Fiz. Tekh. Poluprovodn. 43, 439 (2009) [Semiconductors 43, 419 (2009)].

    Google Scholar 

  11. H. Gomez, A. Maldonado, M. de la L. Olvera, and D. R. Acosta, Sol. Energy Mater Solar Cells 87, 107 (2005).

    Article  Google Scholar 

  12. M. Miyazaki, K. Sato, A. Mitsui, and H. Nishimura, J. Non-Cryst. Sol. 218, 323 (1997).

    Article  ADS  Google Scholar 

  13. I. M. Grankin, G. I. Kal’naya, and V. K. Lopushenko, Zh. Tekh. Fiz. 53, 1754 (1983) [Sov. Tech. Phys. 28, 1080 (1983)].

    Google Scholar 

  14. A. Guinier, X-Ray Diffraction: In Crystals, Imperfect Crystals, and Amorphous Bodies (Dunod, Paris, 1956; Freeman, New York, 1963; Fizmatgiz, Moscow, 1961).

    Google Scholar 

  15. M. Chen, Z. I. Pei, X. Wang, C. Sun, and L. S. Wen, J. Vac. Sci. Technol. A 19, 963 (2001).

    Article  ADS  Google Scholar 

  16. W. W. Wang, X. G. Diao, Z. Wang, M. Yang, T. M. Wang, and Z. Wu, Thin Solid Films 491, 54 (2005).

    Article  ADS  Google Scholar 

  17. K. H. Kim, K. C. Park, and D. Y. Ma, J. Appl. Phys. 81, 7764 (1997).

    Article  ADS  Google Scholar 

  18. K. Ellmer, J. Phys. D.: Appl. Phys. 34, 3097 (2001).

    Article  ADS  Google Scholar 

  19. M. H. Yoon, S. H. Lee, H. L. Park, H. K. Kim, and M. S. Jang, J. Mater. Sci. Lett. 21, 1703 (2002).

    Article  Google Scholar 

  20. R. Wang, A. W. Sleight, and D. Cleary, Chem. Mater. 8, 433 (1996).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, 367003, Russia

    A. Kh. Abduev, A. K. Akhmedov, A. Sh. Asvarov & A. A. Abdullaev

  2. Institute of Crystallography, Russian Academy of Sciences, Moscow, 119333, Russia

    S. N. Sulyanov

Authors
  1. A. Kh. Abduev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. K. Akhmedov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Sh. Asvarov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. A. Abdullaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. S. N. Sulyanov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. Sh. Asvarov.

Additional information

Original Russian Text © A.Kh. Abduev, A.K. Akhmedov, A.Sh. Asvarov, A.A. Abdullaev, S.N. Sulyanov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 34–38.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Abduev, A.K., Akhmedov, A.K., Asvarov, A.S. et al. Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films. Semiconductors 44, 32–36 (2010). https://doi.org/10.1134/S1063782610010045

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782610010045

Keywords

Search

Navigation