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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

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Abstract

Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface are studied. The heterostructures were grown by metalorganic vapor phase epitaxy. Intense positive and negative luminescence was observed in the range of photon energies of 0.3–0.4 eV with a forward and reverse bias, respectively. Dependences of the spectra and intensities for positive and negative luminescence on the pumping current and on the temperature are studied in the range of 77–380 K. It is established that, at a temperature higher than 75°C, intensity of negative luminescence surpasses that of positive luminescence by 60%. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3–4 μm.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. P. Mikhailova, E. V. Ivanov, K. D. Moiseev & Yu. P. Yakovlev

  2. Institute of Physics, Academy of Sciences of Czech Republic, v.v.i., 16200, Prague, Czech Republic

    E. Hulicius, A. Hospodkova, J. Pangrac & T. Šimeček

Authors
  1. M. P. Mikhailova
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  2. E. V. Ivanov
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  3. K. D. Moiseev
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  4. Yu. P. Yakovlev
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  5. E. Hulicius
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  6. A. Hospodkova
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  7. J. Pangrac
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  8. T. Šimeček
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Correspondence to M. P. Mikhailova.

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Original Russian Text © M.P. Mikhailova, E.V. Ivanov, K.D. Moiseev, Yu.P. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, T. Šimeček, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 69–74.

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Mikhailova, M.P., Ivanov, E.V., Moiseev, K.D. et al. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface. Semiconductors 44, 66–71 (2010). https://doi.org/10.1134/S1063782610010100

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