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Growth of the (In2S3) x (FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis

  • Electrical and Optical Properties of Semiconductors
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Abstract

Complete mutual solubility in the (In2S3) x (FeIn2S4)1 − x system is established. The technology is developed, and single crystals of the continuous series of the (In2S3) x (FeIn2S4)1 − x solid solutions are grown for the first time. The linear dependence of the unit cell parameter of single crystals with a cubic spinel lattice on the solid solution composition is found. First, photosensitive Schottky barriers are fabricated, and then, based on studies of their photosensitivity, the character of band-to-band transition is discussed and the values of the band gap depending on the atomic composition are estimated. The possibility of using the obtained solid solutions as broadband photoconverters of optical radiation is revealed.

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References

  1. N. A. Goryunova, Complex Diamond-Like Semiconductors (Sov. Radio, Moscow, 1968) [in Russian].

    Google Scholar 

  2. R. N. Bekimbetov, Yu. V. Rud’, and M. A. Tairov, Fiz. Tekh. Poluprovodn. 21, 1051 (1987) [Sov. Phys. Semicond. 21, 642 (1987)].

    Google Scholar 

  3. N. N. Niftiev and O. B. Tagiev, Fiz. Tekh. Poluprovodn. 38, 164 (2004) [Semiconductors 38, 161 (2004)].

    Google Scholar 

  4. H. D. Lutz and M. Feher, Spectrochim. Acta A 27, 357 (1971).

    Article  Google Scholar 

  5. V. Sagredo, M. C. Moron, L. Betancourt, and G. E. Delgado, J. Magnetism. Mat. 312, 294 (2007).

    Article  ADS  Google Scholar 

  6. A. V. Vedyaev, Usp. Fiz. Nauk 172, 1458 (2002) [Phys. Usp. 45, 1296 (2002)].

    Article  Google Scholar 

  7. S. M. Sze, Physics of Semiconductor Devices (Wiley Intersci., New York, 1981).

    Google Scholar 

  8. J. S. Blakemore, Semiconductor Statistic (Pergamon, New York, 1962).

    Google Scholar 

  9. Yu. I. Ukhanov, Optical Properties of Semiconductors (Nauka, Moscow, 1977) [in Russian].

    Google Scholar 

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Authors and Affiliations

  1. Belarussian State University of Information Science and Radio Engineering, ul. Brovki 17, Minsk, 220013, Belarus

    I. V. Bodnar

  2. St. Petersburg State Polytechnical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. Yu. Rud

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud & E. I. Terukov

Authors
  1. I. V. Bodnar
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  2. V. Yu. Rud
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  3. Yu. V. Rud
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  4. E. I. Terukov
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Corresponding author

Correspondence to V. Yu. Rud.

Additional information

Original Russian Text © I.V. Bodnar, V.Yu. Rud, Yu.V. Rud, E.I. Terukov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 39–43.

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Bodnar, I.V., Rud, V.Y., Rud, Y.V. et al. Growth of the (In2S3) x (FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis. Semiconductors 44, 37–40 (2010). https://doi.org/10.1134/S1063782610010057

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  • DOI: https://doi.org/10.1134/S1063782610010057

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