1. Thermodynamics of complex formation and defect clustering in semiconductors

   • S. V. Bulyarskii
   • V. V. Svetukhin
   • P. E. L’vov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 371 - 375

2. Highly efficient n-(Bi, Sb)₂Te₃ thermoelectric materials for temperatures below 200 K

   • V. A. Kutasov
   • L. N. Luk’yanova
   • P. P. Konstantinov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 376 - 380

3. Tunneling spectroscopy of impurity atoms in a single-crystal semiconductor matrix

   • A. V. Kartavykh
   • N. S. Maslova
   • S. V. Savinov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 381 - 385

4. Saturation of interband absorption in semiconductors

   • A. O. Melikyan
   • G. R. Minasyan

   Electronic and Optical Properties of Semiconductors Pages: 386 - 388

5. Scattering of phonons by a spatially correlated system of Fe atoms and the low-temperature anomaly of thermal conductivity in HgSe:Fe crystals

   • I. G. Kuleev
   • A. T. Lonchakov
   • I. Yu. Arapova

   Electronic and Optical Properties of Semiconductors Pages: 389 - 397

6. Activation-controlled conduction and metal-insulator transition in the impurity band of narrow-gap p-Hg_1−x Cd_xTe doped crystals

   • V. V. Bogoboyashchii
   • S. G. Gasan-zade
   • G. A. Shepel’skii

   Electronic and Optical Properties of Semiconductors Pages: 398 - 404

7. Cathodoluminescence and Raman scattering in Ga_1−x Al_xP epitaxial films

   • L. K. Vodop’yanov
   • V. I. Kozlovskii
   • N. N. Mel’nik

   Electronic and Optical Properties of Semiconductors Pages: 405 - 409

8. Participation of the electron subsystem of a crystal in the reactions of defect-complex decomposition in semiconductors

   • N. I. Boyarkina

   Electronic and Optical Properties of Semiconductors Pages: 410 - 414

9. Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe

   • O. A. Bodnaruk
   • A. V. Markov
   • A. F. Slonetskii

   Electronic and Optical Properties of Semiconductors Pages: 415 - 417

10. Fission of longitudinal autosolitons in InSb in a magnetic field

    • I. K. Kamilov
    • A. A. Stepurenko
    • A. S. Kovalev

    Electronic and Optical Properties of Semiconductors Pages: 418 - 421

11. Nonlinearity of acoustic effects and high-frequency electrical conductivity in GaAs/AlGaAs heterostructures under conditions of the integer quantum Hall effect

    • I. L. Drichko
    • A. M. D’yakonov
    • A. I. Toropov

    Electronic and Optical Properties of Semiconductors Pages: 422 - 428

    

12. Variation in the defect structure of p-CdTe single crystals at the passage of the laser shock wave

    • A. Baidullaeva
    • A. I. Vlasenko
    • P. E. Mozol’

    Electronic and Optical Properties of Semiconductors Pages: 429 - 432

13. Optical spectra and electronic structure of cubic silicon carbide

    • V. V. Sobolev
    • A. N. Shestakov

    Electronic and Optical Properties of Semiconductors Pages: 433 - 437

14. On the theory of anomalous photovoltage in multilayer structures with p-n junctions

    • V. N. Agarev
    • N. A. Stepanova

    Semiconductor Structures, Interfaces, and Surfaces Pages: 438 - 440

    

15. Equilibrium distributions of shallow-level impurity and potential in the near-surface region of a semiconductor in a model with a completely depleted layer

    • V. V. Gavrilovets
    • V. B. Bondarenko
    • V. V. Korablev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 441 - 444

16. On the static conductivity of a disordered quantum system with the mirror symmetry

    • A. G. Moiseev

    Low-Dimensional Systems Pages: 445 - 447

17. A numerical calculation of auger recombination coefficients for InGaAsP/InP quantum well heterostructures

    • N. A. Gun’ko
    • A. S. Polkovnikov
    • G. G. Zegrya

    Low-Dimensional Systems Pages: 448 - 452

18. Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces

    • V. G. Talalaev
    • B. V. Novikov
    • A. Yu. Egorov

    Low-Dimensional Systems Pages: 453 - 461

19. Charge carrier interference in modulated quantum wires

    • N. T. Bagraev
    • W. Gehlhoff
    • I. A. Shelykh

    Low-Dimensional Systems Pages: 462 - 472

20. dependence of the energy spectrum of a strained ZnSe/ZnS superlattice on the charge-carrier concentration

    • R. M. Peleshchak
    • B. A. Lukiyanets

    Low-Dimensional Systems Pages: 473 - 476

21. Structure and properties of a-Si:H films grown by cyclic deposition

    • V. P. Afanas’ev
    • A. S. Gudovskikh
    • E. I. Terukov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 477 - 480

22. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

    • I. L. Krestnikov
    • A. V. Sakharov
    • D. Bimberg

    Physics of Semiconductor Devices Pages: 481 - 487

23. Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)

    • M. Aidaraliev
    • N. V. Zotova
    • R. Brunner

    Physics of Semiconductor Devices Pages: 488 - 492

24. Aleksandr Aleksandrovich Rogachev

    • Zh. I. Alferov
    • P. D. Altukhov
    • V. B. Timofeev

    In Memoriam Pages: 493 - 494