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Tunneling spectroscopy of impurity atoms in a single-crystal semiconductor matrix

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

Impurity atoms of two of the most important classes (so-called “shallow” and “deep” impurities) have been studied by scanning tunneling microscopy/spectroscopy in a single-crystal matrix of III–V semiconductors. This was done in order to determine the potentialities of the techniques in solving analytical and technological problems of semiconductor materials science.

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Authors and Affiliations

  1. Institute of Chemical Problems of Microelectronics, Moscow, 109017, Russia

    A. V. Kartavykh & V. V. Rakov

  2. Faculty of Physics, Moscow State University, Vorob’evy gory, Moscow, 119899, Russia

    N. S. Maslova, V. I. Panov & S. V. Savinov

Authors
  1. A. V. Kartavykh
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  2. N. S. Maslova
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  3. V. I. Panov
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  4. V. V. Rakov
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  5. S. V. Savinov
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Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 394–398.

Original Russian Text Copyright © 2000 by Kartavykh, Maslova, Panov, Rakov, Savinov.

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Kartavykh, A.V., Maslova, N.S., Panov, V.I. et al. Tunneling spectroscopy of impurity atoms in a single-crystal semiconductor matrix. Semiconductors 34, 381–385 (2000). https://doi.org/10.1134/1.1187992

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  • DOI: https://doi.org/10.1134/1.1187992

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