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Highly efficient n-(Bi, Sb)2Te3 thermoelectric materials for temperatures below 200 K

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

The possibility of using an n-type Bi2−x SbxTe3 solid solution in thermoelectric refrigerators at T<200 K is considered. It is shown that, if the material under consideration is optimized for the above temperature region, the temperature dependence of the Seebeck coefficient α becomes less pronounced, and the crystal-lattice thermal conductivity κL decreases as compared to what is observed in a conventional n-Bi2Te3−y Sey solid solution. These factors and a high mobility of charge carriers μ0 bring about an increase in the parameter β ∼ ZT, where Z is the thermoelectric efficiency.

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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 389–393.

Original Russian Text Copyright © 2000 by Kutasov, Luk’yanova, Konstantinov.

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Kutasov, V.A., Luk’yanova, L.N. & Konstantinov, P.P. Highly efficient n-(Bi, Sb)2Te3 thermoelectric materials for temperatures below 200 K. Semiconductors 34, 376–380 (2000). https://doi.org/10.1134/1.1187991

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  • DOI: https://doi.org/10.1134/1.1187991

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