Abstract
Metal-insulator transition and hopping conduction are studied in narrow-gap copper-doped p-Hg1−x CdxTe crystals in a wide range of temperatures, compositions x, and impurity concentrations. It is shown that, as distinct from wide-gap semiconductors, a characteristic size of shallow acceptor wave function responsible for the hopping mechanism of conduction is determined by the effective mass of a heavy, rather than light, hole. The presence of low-temperature ɛ2-conduction over the delocalized states of positively charged acceptors near the metal-insulator transition is established.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 411–417.
Original Russian Text Copyright © 2000 by Bogoboyashch\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Gasan-zade, Shepel’ski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\).
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Bogoboyashchii, V.V., Gasan-zade, S.G. & Shepel’skii, G.A. Activation-controlled conduction and metal-insulator transition in the impurity band of narrow-gap p-Hg1−x CdxTe doped crystals. Semiconductors 34, 398–404 (2000). https://doi.org/10.1134/1.1187995
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DOI: https://doi.org/10.1134/1.1187995