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On the theory of anomalous photovoltage in multilayer structures with p-n junctions

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Steady-and nonsteady-state photovoltages appearing in a multilayer structure with p-n junctions under the conditions of nonuniform illumination are considered for an arbitrary ratio between the diffusion length L and the sizes d of the p-and n-regions. It is shown that, for

, the photovoltage is substantially lower (by d 2/12L 2 times) than in the case of

owing to the mutual influence of neighboring p-n junctions. Relaxation of the photovoltage is controlled by recharging of the barrier capacitances of p-n junctions, and the relaxation time exceeds by several orders of magnitude the lifetime of nonequilibrium charge carriers in the p-and n-regions. The results obtained make it possible to explain the special features of the effect of anomalous photovoltage in polycrystalline films.

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Authors and Affiliations

  1. Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603600, Russia

    V. N. Agarev & N. A. Stepanova

Authors
  1. V. N. Agarev
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  2. N. A. Stepanova
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 452–454.

Original Russian Text Copyright © 2000 by Agarev, Stepanova.

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Agarev, V.N., Stepanova, N.A. On the theory of anomalous photovoltage in multilayer structures with p-n junctions. Semiconductors 34, 438–440 (2000). https://doi.org/10.1134/1.1188003

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  • DOI: https://doi.org/10.1134/1.1188003

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