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Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe

  • Electronic and Optical Properties of Semiconductors
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Abstract

The main band parameters of HgCdMnTe and HgCdZnTe quaternary solid solutions were theoretically and experimentally studied. Empirical formulas were proposed for the bandgap and intrinsic carrier concentration in a wide range of temperatures and compositions. Calculated values were found to conform well to experimental data.

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Authors and Affiliations

  1. Fed’kovich State University, ul. Kotsyubinskogo 2, Chernovtsy, 274012, Ukraine

    O. A. Bodnaruk, A. V. Markov, S. É. Ostapov, I. M. Rarenko & A. F. Slonetskii

Authors
  1. O. A. Bodnaruk
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  2. A. V. Markov
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  3. S. É. Ostapov
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  4. I. M. Rarenko
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  5. A. F. Slonetskii
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 430–432.

Original Russian Text Copyright © 2000 by Bodnaruk, Markov, Ostapov, Rarenko, Slonetski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\).

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Bodnaruk, O.A., Markov, A.V., Ostapov, S.É. et al. Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe. Semiconductors 34, 415–417 (2000). https://doi.org/10.1134/1.1187998

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  • DOI: https://doi.org/10.1134/1.1187998

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