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Thermodynamics of complex formation and defect clustering in semiconductors

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

Characteristics of complex defects in semiconductors are calculated by the method of minimizing the free energy for the actual crystal. The influence of the electron subsystem on the impurity solubility is considered. The modeling of solidus curves is carried out in terms of binary association and clustering.

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Authors and Affiliations

  1. Ul’yanovsk State University, Ul’yanovsk, 432700, Russia

    S. V. Bulyarskii, V. V. Svetukhin & P. E. L’vov

Authors
  1. S. V. Bulyarskii
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  2. V. V. Svetukhin
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  3. P. E. L’vov
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 385–388.

Original Russian Text Copyright © 2000 by Bulyarski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Svetukhin, L’vov.

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Bulyarskii, S.V., Svetukhin, V.V. & L’vov, P.E. Thermodynamics of complex formation and defect clustering in semiconductors. Semiconductors 34, 371–375 (2000). https://doi.org/10.1134/1.1187990

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  • DOI: https://doi.org/10.1134/1.1187990

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