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Equilibrium distributions of shallow-level impurity and potential in the near-surface region of a semiconductor in a model with a completely depleted layer

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

A model of completely depleted layer was used to derive analytical expressions for equilibrium distributions of shallow-level impurity, electric field, and potential in the near-surface region of a semiconductor. The results of calculation were used to estimate the variation in the parameters of a finite-size structure. It was found that, in the approximation used, it was possible to reduce the concentration of electrically active defects by several times for semiconductor layers ∼1 µm thick.

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Authors and Affiliations

  1. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. V. Gavrilovets, V. B. Bondarenko, Yu. A. Kudinov & V. V. Korablev

Authors
  1. V. V. Gavrilovets
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  2. V. B. Bondarenko
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  3. Yu. A. Kudinov
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  4. V. V. Korablev
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 455–458.

Original Russian Text Copyright © 2000 by Gavrilovets, Bondarenko, Kudinov, Korablev.

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Gavrilovets, V.V., Bondarenko, V.B., Kudinov, Y.A. et al. Equilibrium distributions of shallow-level impurity and potential in the near-surface region of a semiconductor in a model with a completely depleted layer. Semiconductors 34, 441–444 (2000). https://doi.org/10.1134/1.1188004

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  • DOI: https://doi.org/10.1134/1.1188004

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