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Cathodoluminescence and Raman scattering in Ga1−x AlxP epitaxial films

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Abstract

Low-temperature cathodoluminescence and Raman scattering of Ga1−x AlxP epitaxial layers (0≤x≤0.8) grown by liquid phase epitaxy on the GaP(100) substrate are studied. The obtained cathodoluminescence spectra indicate that the dependence of the indirect energy gap on the composition parameter x is nonlinear. This nonlinearity can be described by the parabolic function with the inflection parameter b=0.13. Raman scattering studies show that the phonon spectrum of Ga1−x AlxP consists of one (Al-P)-like vibrational mode and three (Ga-P)-like modes.

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Authors and Affiliations

  1. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924, Russia

    L. K. Vodop’yanov, V. I. Kozlovskii & N. N. Mel’nik

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  1. L. K. Vodop’yanov
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  2. V. I. Kozlovskii
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  3. N. N. Mel’nik
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 418–424.

Original Russian Text Copyright © 2000 by Vodop’yanov, Kozlovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Mel’nik.

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Vodop’yanov, L.K., Kozlovskii, V.I. & Mel’nik, N.N. Cathodoluminescence and Raman scattering in Ga1−x AlxP epitaxial films. Semiconductors 34, 405–409 (2000). https://doi.org/10.1134/1.1187996

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  • DOI: https://doi.org/10.1134/1.1187996

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