Participation of the electron subsystem of a crystal in the reactions of defect-complex decomposition in semiconductors

Abstract

The reactions of defect-complex decomposition in semiconductors are considered. The contribution from the electron subsystem to the reaction rate is taken into account by adding a change in the electron-subsystem energy of a crystal (as a result the reaction) to the energy barrier of the reaction. The theoretical and experimental data are compared by the example of the reactions of E-center decomposition in the n-type phosphorus-doped silicon. The dependence of temperature of isochronous annealing of E centers on a donor-impurity concentration is explained. The first stage of annealing (T _ann≈400 K) in a low-resistivity silicon is caused by the decomposition of the E center and can be explained using the model of a vacancy as the double acceptor center with a negative correlation energy and values of vacancy charge-exchange levels E _V (0/-)=E _c -0.99 eV, E _V (-/—)=E _c =−0.39 eV. From the comparison between calculated and experimental data, the dissociation energy of E center and the degeneracy factor are obtained to be U _a0≈0.96 eV and $g_E^ - /g_E^0 = 1/16$, respectively.