Abstract
Quantized conductance as a function of the charge carrier energy in modulated quantum wires is investigated for the first time. The energy dependence of the coefficient of transit through a modulated quantum wire was calculated, with the δ-potential approximation used to describe the charge carrier quantum interference in the system of ultrasteep internal barriers. The current steps and oscillations in the quantized conductance plateaus, observable as the oscillating features in the quantum wire conductance under varying longitudinal voltage, are predicted. Such oscillations, resulting from the quantum interference of the ballistic holes, are observed experimentally for the first time by recording quantized conductance plateaus as a function of the volt-age applied along the silicon modulated quantum wire.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 477–487.
Original Russian Text Copyright © 2000 by Bagraev, Gehlhoff, Ivanov, Klyachkin, Malyarenko, Shelykh.
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Bagraev, N.T., Gehlhoff, W., Ivanov, V.K. et al. Charge carrier interference in modulated quantum wires. Semiconductors 34, 462–472 (2000). https://doi.org/10.1134/1.1188008
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DOI: https://doi.org/10.1134/1.1188008