Abstract
Variations in the minority-carrier lifetime, photoluminescence spectra, dark current and photocurrent temperature dependences of high-resistivity p-CdTe crystals under the action of the laser shock wave are investigated. It is shown that the variations in the aforementioned characteristics during the passage of the shock wave are defined by the generation of the nonequilibrium carriers from deep centers, and, after that, the variations are defined by the formation of intrinsic defects and their subsequent interaction with the defects existing in the initial crystals.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 443–446.
Original Russian Text Copyright © 2000 by Ba\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\)dullaeva, Vlasenko, Gorkovenko, Lomovtsev, Mozol’.
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Baidullaeva, A., Vlasenko, A.I., Gorkovenko, B.L. et al. Variation in the defect structure of p-CdTe single crystals at the passage of the laser shock wave. Semiconductors 34, 429–432 (2000). https://doi.org/10.1134/1.1188001
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DOI: https://doi.org/10.1134/1.1188001