Confined epitaxial growth by low-pressure chemical vapor deposition K. OsmanN. S. LloydJ. S. Hamel OriginalPaper Pages: 257 - 260
Non-selective growth of SiGe heterojunction bipolar trasistor layers at 700 °C with dual control of n- and p-type dopant profiles H. A. W. El MubarekJ. M. BonarS. Hall OriginalPaper Pages: 261 - 265
Misfit dislocations in GaAsN/GaAs interface J. ToivonenT. TuomiD. Lowney OriginalPaper Pages: 267 - 270
AlGaN/GaN HEMTS: material, processing, and characterization F. CalleT. PalaciosI. Moerman OriginalPaper Pages: 271 - 277
High-temperature strength of bulk single crystals of III-V nitrides I. Yonenaga OriginalPaper Pages: 279 - 281
Tilted-wing-induced stress distribution in epitaxial lateral overgrown GaN W. M. ChenP. J. McNallyJ. Toivonen OriginalPaper Pages: 283 - 286
Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films H. CastánS. DueñasG. González-Díaz OriginalPaper Pages: 287 - 290
Structural and optical characterization of CuInS2 thin films grown by vacuum evaporation method Y. AkakiH. KomakiT. Ikari OriginalPaper Pages: 291 - 294
Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen A. MisiukA. BarczL. Bryja OriginalPaper Pages: 295 - 298
Transfer of thin Si layers by cold and thermal ion cutting K. HenttinenT. SuniS. S. Lau OriginalPaper Pages: 299 - 303
Transformation of hydrogen trapped onto microbubbles into H platelet layer in SI A. Y. UsenkoW. N. CarrBo Chen OriginalPaper Pages: 305 - 309
Capacitance and current–voltage simulation of EEPROM technology highly doped MOS structures S. CrociC. PlossuP. Boivin OriginalPaper Pages: 311 - 314
Rapid thermal annealing of Cu/WN x /Si structures A. LipsanenP. KuivalainenS. Franssila OriginalPaper Pages: 315 - 318
Realization of electroplating molds with thick positive SPR 220-7 photoresist E. KukharenkaM. Kraft OriginalPaper Pages: 319 - 322
Self-assembled germanium islands grown on (0 0 1) silicon substrates by low-pressure chemical vapor deposition G. D. M. DilliwayD. M. BagnallC. Jeynes OriginalPaper Pages: 323 - 327
Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride M. F. BainB. M. ArmstrongH. S. Gamble OriginalPaper Pages: 329 - 332
Copper nanoparticles within amorphous and crystalline dielectric matrices V. S. GurinD. L. KovalenkoN. E. Bogdanchikova OriginalPaper Pages: 333 - 336
Growth and magnetic properties of MnGe films for spintronic application N. PintoL. MorresiA. Verna OriginalPaper Pages: 337 - 340
Infrared absorption of a-SiC : H as a function of the annealing temperature R. MurriN. PintoU. Coscia OriginalPaper Pages: 341 - 344
Spectroellipsometric studies of 0.9PbMg1/3Nb2/3O3-0.1PbTiO3 thin films W. S. TsangF. F. HauK. H. Wong OriginalPaper Pages: 345 - 348
Formation kinetics and structure of self-assembled poly(3-alkylthiophene) films on gold surface T. MatsuuraH. SakaguchiY. Shimoyama OriginalPaper Pages: 353 - 356
Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots H. KoskenvaaraT. HakkarainenM. Sopanen OriginalPaper Pages: 357 - 360
Atomic layer deposition of HfO2 thin films and nanolayered HfO2–Al2O3–Nb2O5 dielectrics Kaupo KukliMikko RitalaLata Prabhu OriginalPaper Pages: 361 - 367
Relaxor ferroelectric thin-film heterostructures: Scaling of dielectric properties M. TyuninaJ. LevoskaS. Leppävuori OriginalPaper Pages: 369 - 374
A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide S. DueñasH. CastánG. González-Díaz OriginalPaper Pages: 375 - 378
Surface treatment for high-quality Al2O3 and HfO2 layers deposited on HF-dipped surface by atomic layer deposition J.-F. DamlencourtO. RenaultF. Bedu OriginalPaper Pages: 379 - 382
Electrical and microstructural properties of Bi2−x Sb x Te and Bi2−x Sb x Te2 foils obtained by the ultrarapid quenching process E. KukharenkaN. FrétyJ. C. Tédenac OriginalPaper Pages: 383 - 388
Polyaniline films deposited by anodic polymerization: Properties and applications to chemical sensing L. GrigoreM. C. Petty OriginalPaper Pages: 389 - 392
Planar chiral meta-materials for photonic devices A. PottsA. PapakostasD. M. Bagnall OriginalPaper Pages: 393 - 395
Effects of molecular shape on the photoluminescence of dyes embedded in a chiral polymer with a photonic band gap K. BjorknasP. RaynesS. Gilmour OriginalPaper Pages: 397 - 401
Growth of GaAs on polycrystalline silicon-on-insulator J. RiikonenA. SäynätjokiJ. Ahopelto OriginalPaper Pages: 403 - 405
Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films A. M. NardesA. M. de AndradeE. N. S. Muccillo OriginalPaper Pages: 407 - 411
Photonic band gaps in 12-fold symmetric quasicrystals B. P. HiettD. H. BeckettK. S. Thomas OriginalPaper Pages: 413 - 416
Optical waveguides on polysilicon-on-insulator A. SäynätjokiJ. RiikonenJ. Ahopelto OriginalPaper Pages: 417 - 420
Nonradiative electron–hole recombination in ZnSSe epitaxial layers examined by piezoelectric photothermal spectroscopy K. YoshinoA. MemonK. Ando OriginalPaper Pages: 421 - 425
A batch process to deposit amorphous metallic Mo–Si–N films H. KattelusH. HeikkinenA. Tolkki OriginalPaper Pages: 427 - 430
Piezoelectric ZnO films by r.f. sputtering J. MolariusJ. KaitilaM. Ylilammi OriginalPaper Pages: 431 - 435
Radiation damage induced in Si photodiodes by high-temperature neutron irradiation H. OhyamaK. TakakuraT. Kishikawa OriginalPaper Pages: 437 - 440
Micro-Raman investigations of the degree of relaxation in thin SiGe buffer layers with high Ge content T. S. PerovaR. MauriceE. Kasper OriginalPaper Pages: 441 - 444
Correlating integrated circuit process-induced strain and defects against device yield and process control monitoring data M. KarilahtiT. TuomiA. N. Danilewsky OriginalPaper Pages: 445 - 449
Influence of irradiation temperature on electron-irradiated STI Si diodes H. OhyamaK. HayamaC. Claeys OriginalPaper Pages: 451 - 454
Stress characterization of device layers and the underlying Si1−x Ge x virtual substrate with high-resolution micro-Raman spectroscopy W. M. ChenP. J. McNallyA. F. W. Willoughby OriginalPaper Pages: 455 - 458
3D atomic imaging of SiGe system by X-ray fluorescence holography K. HayashiY. TakahashiN. Usami OriginalPaper Pages: 459 - 462