Abstract
Tungsten and tungsten nitride layers have been deposited by plasma-enhanced chemical vapor deposition (PECVD). Tungsten layers deposited at low deposition temperatures T∼150 °C using this method showed good uniformity over dielectric and silicon substrate areas. As the deposition temperature decreased, the silicon consumed during the deposition reaction decreased, at T∼150 °C no silicon consumption was measurable. PECVD tungsten nitride layers were deposited directly on oxidized silicon substrates with no requirement for a nucleation layer. As the NH3 flow rate was increased, whilst maintaining all other parameters constant, deposited layers were found to change from metal tungsten to tungsten-rich amorphous layer to W2N. The resistivity of the layers was found to be high compared to published literature for higher-temperature deposited layers. The high resistivity is attributed to the incorporation of fluorine into the layer at low deposition temperatures. A deposition process was established for smooth amorphous tungsten-rich W x N layers at 150 °C.
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Bain, M.F., Armstrong, B.M. & Gamble, H.S. Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride. Journal of Materials Science: Materials in Electronics 14, 329–332 (2003). https://doi.org/10.1023/A:1023928012829
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DOI: https://doi.org/10.1023/A:1023928012829