Abstract
This paper is concerned with the feasibility and reproducibility of the ultrarapid quenching process used to fabricate Bi2−x Sb x Te and Bi2−x Sb x Te2 alloys for thermoelectric applications. Microstructural properties of the materials, obtained in the shape of foils, were studied concerning the phase analysis, cell parameters, texture, and microstructure observations. The Bi2−x Sb x Te alloys were found to have the (2 0 \(\bar 2\) 3) texture. The (2 0 \(\bar 2\) 4) texture, with an additional (1 1 \(\bar 2\) 0) component for x values greater than 0.4, was predominant for Bi2−x Sb x Te2 foils. The electrical properties of these materials were then characterized by measuring the Seebeck coefficient, Hall coefficient, and electrical resistivity. It was found that Bi2−x Sb x Te foils changed from n- to p-type for an x-value of about 1.2. A maximum Seebeck coefficient, |α|, of 36×10−6 V K−1 was measured for Bi2Te. In the case of Bi2−x Sb x Te2 foils, the change from n- to p-type was observed for an x value of about 1. A maximum Seebeck coefficient, |α|, of 32×10−6 V K−1, was measured for Bi1.4Sb0.6Te2. Measurements of the temperature-dependent electrical resistivity, Hall and Seebeck coefficients of the foils were carried out and the analysis revealed a semi-metallic behavior.
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Kukharenka, E., Fréty, N., Shepelevich, V.G. et al. Electrical and microstructural properties of Bi2−x Sb x Te and Bi2−x Sb x Te2 foils obtained by the ultrarapid quenching process. Journal of Materials Science: Materials in Electronics 14, 383–388 (2003). https://doi.org/10.1023/A:1023956819190
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DOI: https://doi.org/10.1023/A:1023956819190