Abstract
Smooth, 4–6-nm thick hafnium oxide films were grown by atomic layer deposition from HfI4 or HfCl4 and H2O on SiO2/Si(1 0 0) substrates at 300 °C. Non-uniform films were obtained on hydrogen-terminated Si(1 0 0). The stoichiometry of the films corresponded to that of HfO2. The films contained small amounts of residual chlorine and iodine. The films deposited on SiO2/Si(1 0 0) were amorphous, but crystallized upon annealing at 1000 °C. In order to decrease the conductivity, the HfO2 films were mixed with Al2O3, and to increase the capacitance, the films were mixed with Nb2O5. The capacitance–voltage curves of the Hf–Al–O mixture films showed hysteresis. The capacitance–voltage curves of HfO2 films and mixtures of Hf–Al–Nb–O were hysteresis free.
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Kukli, K., Ritala, M., Leskelä, M. et al. Atomic layer deposition of HfO2 thin films and nanolayered HfO2–Al2O3–Nb2O5 dielectrics. Journal of Materials Science: Materials in Electronics 14, 361–367 (2003). https://doi.org/10.1023/A:1023948617372
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DOI: https://doi.org/10.1023/A:1023948617372