Abstract
Structural and optical properties of CuInS2 thin films grown by the single-source thermal evaporation method have been studied. The films were annealed from 100 to 500 °C after an evaporation in air. The surface morphology was investigated by scanning electron microscopy. The maximum grain size of the samples after annealing at 400 °C was over 500 nm. The EPM analysis concluded that the polycrystalline CuInS2 thin films after annealing below 100 °C were Cu-rich, and those annealed above 200 °C were In-rich. The bandgap energy of the CuInS2 films after annealing above 300 °C was about 1.48 eV.
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Akaki, Y., Komaki, H., Yoshino, K. et al. Structural and optical characterization of CuInS2 thin films grown by vacuum evaporation method. Journal of Materials Science: Materials in Electronics 14, 291–294 (2003). https://doi.org/10.1023/A:1023959525125
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DOI: https://doi.org/10.1023/A:1023959525125