Abstract
Results are presented of a detailed study of the effects of a high-temperature 2-MeV electron irradiation on the performance degradation of shallow trench isolation (STI) diodes. The macroscopic device performance will be correlated with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the reverse current increases after irradiation. After 20 °C irradiation, two majority hole capture levels with (E v+0.18 eV) and (E v+0.34 eV) were induced in the n-Si substrate, while one hole capture level at (E v+0.14 eV) was also found after 200 °C irradiation. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decrease with increasing irradiation temperature. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.
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Ohyama, H., Hayama, K., Takakura, K. et al. Influence of irradiation temperature on electron-irradiated STI Si diodes. Journal of Materials Science: Materials in Electronics 14, 451–454 (2003). https://doi.org/10.1023/A:1023989726458
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DOI: https://doi.org/10.1023/A:1023989726458