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Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen

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Abstract

The effect of annealing of oxygen-implanted silicon (Si : O, oxygen doses 3.5×1017 cm−2 and 6×1017 cm−2; energy 140 keV and 170 keV) at high temperatures (HT, up to 1570 K) under enhanced hydrostatic pressure (HP, up to 1.2 GPa) for 5 h is investigated by means of structure-sensitive methods. It has been shown that the kind and concentration of defects created at HT–HP in Si : O and the homogeneity of the buried SiO2 layer are markedly dependent on external stress applied at HT. Some differences between the formation processes of SiO2 under normal conditions and at HP are discussed.

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Authors and Affiliations

  1. Institute of Electron Technology, Al. Lotnikow 46, 02-668, Warsaw, Poland

    A. Misiuk, A. Barcz & J. Ratajczak

  2. Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370, Wroclaw, Poland

    L. Bryja

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  1. A. Misiuk
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  2. A. Barcz
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  3. J. Ratajczak
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  4. L. Bryja
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Misiuk, A., Barcz, A., Ratajczak, J. et al. Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen. Journal of Materials Science: Materials in Electronics 14, 295–298 (2003). https://doi.org/10.1023/A:1023911609195

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