Abstract
We performed an investigation on the origin of some temperature-reversible jumps found in the electrical conductivity of a-SiC : H alloys. The samples were grown by plasma-enhanced chemical vapor deposition using a gas mixture of SiH4+C2H2. An infrared (IR) analysis of the variations of the IR absorption peaks was carried out during a thermal cycle: the annealing temperature, T a, was increased from 25 °C up to 250 °C followed by cooling under identical conditions. The evolution of each IR peak was followed as a function of T a, acquiring the absorption curve with temperature steps of about 50 °C. The analysis of some characteristic parameters of the IR peaks shows the reversible behavior of the IR absorption as a function of T a. An attempt is made to correlate the IR absorption peak variations with the discontinuities observed in the electrical conductivity.
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Murri, R., Pinto, N., Giuliodori, S. et al. Infrared absorption of a-SiC : H as a function of the annealing temperature. Journal of Materials Science: Materials in Electronics 14, 341–344 (2003). https://doi.org/10.1023/A:1023984214647
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DOI: https://doi.org/10.1023/A:1023984214647