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Rapid thermal annealing of Cu/WN x /Si structures

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Abstract

The thermal stability of Cu/WN x /Si multilayer structures fabricated by using reactive d.c. magnetron sputtering was studied using rapid thermal annealing (RTA) and several analytic methods. The analytic methods included four-point resistance measurements, X-ray diffraction analysis, Rutherford backscattering spectrometry, and optical and scanning electron microscopy. The barrier performance of WN x -layers is compared to the performance of sputtered W layers. It is shown that a 15-nm thick tungsten nitride (WN x ) layer prevents the destructive reactions up to 700 °C for a 12-s RTA process in a nitrogen atmosphere.

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Authors and Affiliations

  1. Electron Physics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-, 02015, HUT, Finland

    A. Lipsanen & P. Kuivalainen

  2. Accelerator Laboratory, University of Helsinki, P.O. Box 43, FIN-, 00014, Finland

    E. Rauhala & A. Seppa¨la¨

  3. Microelectronics Centre, Helsinki University of Technology, P.O. Box 3000, FIN-, 02015, HUT, Finland

    S. Franssila

Authors
  1. A. Lipsanen
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  2. P. Kuivalainen
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  3. E. Rauhala
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  4. A. Seppa¨la¨
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  5. S. Franssila
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Lipsanen, A., Kuivalainen, P., Rauhala, E. et al. Rapid thermal annealing of Cu/WN x /Si structures. Journal of Materials Science: Materials in Electronics 14, 315–318 (2003). https://doi.org/10.1023/A:1023971827850

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