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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

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Abstract

In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used, which is very much higher than typical values in conventional systems. We present results obtained by X-ray diffraction and FTIR spectroscopy. Moreover, we will compare the properties of the resulting TiO2-insulator-metal capacitors with those of anodic Ta2O5. Very thin films of TiO2 have been obtained with a very promising quality for future electron device fabrication.

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Authors and Affiliations

  1. Departamento de Electricidad y Electrónica, E.T.S.I.Telecomunicación, Universidad de Valladolid, Campus “Miguel Delibes”, 47014, Valladolid, Spain

    S. Dueñas, H. Castán, J. Barbolla, E. San Andrés, A. del Prado, I. Mártil & G. González-Díaz

Authors
  1. S. Dueñas
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  2. H. Castán
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  3. J. Barbolla
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  4. E. San Andrés
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  5. A. del Prado
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  6. I. Mártil
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  7. G. González-Díaz
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Dueñas, S., Castán, H., Barbolla, J. et al. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide. Journal of Materials Science: Materials in Electronics 14, 375–378 (2003). https://doi.org/10.1023/A:1023952718281

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  • DOI: https://doi.org/10.1023/A:1023952718281

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