Abstract
Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy (DLTS). It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels with (E c–0.22 eV) and (E c–0.40 eV) were induced in the n-Si substrate, while one minority hole capture level with (E v+0.37 eV) was found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decreases with increasing irradiation temperature. For a 250 °C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.
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P. Hazdra, V. Haslar and M. Bartos, Nucl. Instrum. and Methods, B 55 (1991) 637.
J. G. Xu, F. Lu and H. Sun, Phys. Rev. B, 38 (1988) 3395.
M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood and P. S. Winokur, IEEE Trans. Nucl. Sci., 45 (1996) 1372.
IAEA Technical Reports Series No. 357 (IAEA, 1993).
A. N. Garg and R. J. Batra, J. Radioanal. Nucl. Chem. Articles 98 (1986) 167.
H. Ohyama, T. Hirao, E. Simoen, C. Claeys, S. Onoda, Y. Takami and H. Itoh, Physica B, 308–310 (2002) 1226.
G. P. Summers, E. A. Bruke, P. Shapiro, S. C. Messenger and R. J. Walter, IEEE Trans. Nucl. Sci., 40 (1993) 1372.
H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama, H. Sunaga, J. Poortmans and M. Caymax, IEEE Trans. Nucl. Sci., 42 (1995) 1550.
J. Lalita, B. G. Sevensson and C. Jagadish, Nucl. Instrum. Meth. Phys. Research B, 96 (1995) 210.
L. C. Kimerling, IEEE Trans. Nucl. Sci. 23 (1976) 1497.
K. Aurangzeb et al., J. Appl. Phys. 90 (2001) 1170.
S. J. Watts, J. Matheson, I. H. Hopkins-Bond, A. Holmes-Seidle, A. Mohammadzadeh and R. Pace, IEEE Trans. Nucl. Sci., 43 (1996) 2587.
K. Gill, G. Hall and B. Macevoy, J. Appl. Phys., 82 (1997) 126.
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Ohyama, H., Takakura, K., Matsuoka, H. et al. Radiation damage induced in Si photodiodes by high-temperature neutron irradiation. Journal of Materials Science: Materials in Electronics 14, 437–440 (2003). https://doi.org/10.1023/A:1023933608712
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DOI: https://doi.org/10.1023/A:1023933608712