Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence N. A. Sobolev Review 26 January 2010 Pages: 1 - 23
Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis G. A. BordovskyA. V. MarchenkoE. I. Terukov Atomic Structure and Nonelectronic Properties of Semiconductors 26 January 2010 Pages: 24 - 27
Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese A. F. OrlovL. A. BalagurovV. I. Zinenko Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 28 - 31
Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films A. Kh. AbduevA. K. AkhmedovS. N. Sulyanov Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 32 - 36
Growth of the (In2S3) x (FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis I. V. BodnarV. Yu. RudE. I. Terukov Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 37 - 40
Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution V. B. BondarenkoS. N. DavydovA. V. Filimonov Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 41 - 44
Discovery of the (In2S3) x (MnIn2S4)1 − x solid solutions and fabrication of photosensitive structures based on them V. Yu. RudYu. V. RudI. V. Bodnar Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 45 - 49
Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures D. A. FirsovL. ShterengasG. Belenky Semiconductor Structures, Interfaces, and Surfaces 26 January 2010 Pages: 50 - 58
Monitoring the composition of the Cd1 − z Zn z Te heteroepitaxial layers by spectroscopic ellipsometry M. V. YakushevV. A. ShvetsT. S. Shamirzaev Semiconductor Structures, Interfaces, and Surfaces 26 January 2010 Pages: 59 - 65
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface M. P. MikhailovaE. V. IvanovT. Šimeček Low-Dimensional Systems 26 January 2010 Pages: 66 - 71
Formation of three-dimensional ZnSe-based semiconductor nanostructures S. V. AlyshevA. O. ZabezhaylovE. M. Dianov Low-Dimensional Systems 26 January 2010 Pages: 72 - 75
Charge carrier transport in Ge20As20S60 chalcogenide semiconductor films L. P. KazakovaK. D. TsendinI. A. Obukhova Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 76 - 78
The nature of emission of porous silicon produced by chemical etching N. E. KorsunskayaT. R. StaraF. F. Sizov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 79 - 83
Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon A. B. Golodenko Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 84 - 88
Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements M. B. GongalskyE. A. KonstantinovaV. Yu. Timoshenko Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 89 - 92
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes A. F. TsatsulnikovW. V. LundinF. Hue Physics of Semiconductor Devices 26 January 2010 Pages: 93 - 97
Paradoxes of photoconductive target and optical control of secondary ion yield A. G. RokakhM. D. Matasov Physics of Semiconductor Devices 26 January 2010 Pages: 98 - 105
Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures V. A. Kukushkin Physics of Semiconductor Devices 26 January 2010 Pages: 106 - 111
The initial stage of growth of crystalline nanowhiskers N. V. SibirevM. B. NazarenkoV. G. Dubrovskii Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 112 - 115
The role of stress distribution at the film/barrier interface in formation of copper silicides A. V. PaninA. R. ShugurovYe. V. Shesterikov Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 116 - 122
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes W. V. LundinE. E. ZavarinA. F. Tsatsulnikov Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 123 - 126
Monte Carlo simulation of growth of nanowhiskers A. G. NastovjakI. G. NeizvestnyZ. Sh. Yanovitskaya Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 127 - 132
To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009) In Memoriam 26 January 2010 Pages: 133 - 133