Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers O. V. AleksandrovYu. A. NikolaevN. A. Sobolev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1 - 5
Elastic strain and composition of self-assembled GeSi nanoislands on Si(001) N. V. VostokovS. A. GusevD. O. Filatov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 6 - 10
Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures E. F. VengerYu. G. Sadof’evL. V. Borkovskaya Electronic and Optical Properties of Semiconductors Pages: 11 - 16
Evolution of photoluminescence spectra of stoichiometric CdTe: Dependence on the purity of starting components A. V. KvitYu. V. KlevkovA. F. Plotnikov Electronic and Optical Properties of Semiconductors Pages: 17 - 20
Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions G. A. KachurinL. RebohleH. Froeb Electronic and Optical Properties of Semiconductors Pages: 21 - 26
Special features of electrical activation of 28Si in single-crystal and epitaxial GaAs subjected to rapid thermal annealing V. M. ArdyshevM. V. ArdyshevS. S. Khludkov Electronic and Optical Properties of Semiconductors Pages: 27 - 31
Electrophysical properties of Hg1−x CdxTe crystals under hydrostatic pressure I. V. VirtV. D. ProzorovskiiD. I. Tsyutsyura Electronic and Optical Properties of Semiconductors Pages: 32 - 34
Band structure and spatial charge distribution in AlxGa1−x N V. G. DeibukA. V. VoznyiM. M. Sletov Electronic and Optical Properties of Semiconductors Pages: 35 - 39
Field dependence of the rate of thermal emission of holes from the V Ga S As complex in gallium arsenide S. V. BulyarskiiN. S. GrushkoA. V. Zhukov Electronic and Optical Properties of Semiconductors Pages: 40 - 44
Electron spin resonance in the vicinity of metal-insulator transition in compensated n-Ge:As A. I. VeingerA. G. ZabrodskiiT. V. Tisnek Electronic and Optical Properties of Semiconductors Pages: 45 - 55
Ellipsometric study of ultrathin AlxGa1−x As layers M. V. SukhorukovaI. A. SkorokhodovaV. P. Khvostikov Semiconductors Structures, Interfaces, and Surfaces Pages: 56 - 60
Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering V. A. VolodinM. D. EfremovV. A. Sachkov Semiconductors Structures, Interfaces, and Surfaces Pages: 61 - 66
Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure O. O. MamatkarimovS. Z. ZainabidinovU. A. Tuichiev Semiconductors Structures, Interfaces, and Surfaces Pages: 67 - 69
Effect of the insulator-gallium arsenide boundary on the behavior of silicon in the course of radiation annealing V. M. ArdyshevM. V. ArdyshevS. S. Khludkov Semiconductors Structures, Interfaces, and Surfaces Pages: 70 - 72
Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data R. V. Kuz’menkoA. V. GanzhaA. Schlachetzki Semiconductors Structures, Interfaces, and Surfaces Pages: 73 - 80
Energy distribution of localized states in amorphous hydrogenated silicon K. V. KougiyaE. I. TerukovI. N. Trapeznikova Amorphous, Vitreous, and Porous Semiconductors Pages: 81 - 86
Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions O. A. GolikovaA. N. KuznetsovV. A. Terekhov Amorphous, Vitreous, and Porous Semiconductors Pages: 87 - 91
The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon E. I. TerukovV. Kh. KudoyarovaV. Yu. Timoshenko Amorphous, Vitreous, and Porous Semiconductors Pages: 92 - 94
Crystal-glass phase transition induced by pulses of electric field in chalcogenide semiconductors É. A. LebedevK. D. TséndinL. P. Kazakova Amorphous, Vitreous, and Porous Semiconductors Pages: 95 - 97
Growth of a-C:H and a-C:H〈Cu〉 films produced by magnetron sputtering T. K. ZvonarevaV. I. Ivanov-OmskiiL. V. Sharonova Amorphous, Vitreous, and Porous Semiconductors Pages: 98 - 103
Light emitting diodes for the spectral range of λ=3.3–4.3 μm fabricated from the InGaAs-and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20–180°C M. AidaralievN. V. ZotovaG. N. Talalakin Physics of Semiconductor Devices Pages: 104 - 107
Current transport in the Me-n-n + Schottky-barrier structures N. A. TorkhovS. V. Eremeev Physics of Semiconductor Devices Pages: 108 - 114
Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage A. A. Lebedev Jr.A. A. LebedevD. V. Davydov Physics of Semiconductor Devices Pages: 115 - 118
A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate S. S. MikhrinA. E. ZhukovZh. I. Alferov Physics of Semiconductor Devices Pages: 119 - 121