Abstract
Light emitting diodes (LEDs) with λmax=3.4 and 4.3 µm (t=20°C) were studied at elevated temperatures. It is demonstrated that LEDs operating in the temperature range t=20–180°C can be described using the classical concepts of injection radiation sources and the processes of charge carrier recombination. The temperature dependences of reverse currents in the saturation regions of current-voltage characteristics are consistent with the increase in the intrinsic-carrier concentration according to the Shockley theory. The emission spectra are described on the assumption of the direct band-to-band transitions, spherically symmetric bands, and thermalized charge carriers. The current-power characteristics are proportional to I 3/2 suggesting that the contribution of the nonradiative Auger recombination is dominant. The radiation power decreases exponentially with the temperature which is characteristic of the CHSH and CHCC processes.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 102–105.
Original Russian Text Copyright © 2000 by A\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\)daraliev, Zotova, Karandashev, Matveev, Remenny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Stus’, Talalakin.
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Aidaraliev, M., Zotova, N.V., Karandashev, S.A. et al. Light emitting diodes for the spectral range of λ=3.3–4.3 μm fabricated from the InGaAs-and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20–180°C. Semiconductors 34, 104–107 (2000). https://doi.org/10.1134/1.1187963
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DOI: https://doi.org/10.1134/1.1187963