Abstract
A model of current transport in Schottky-barrier diodes based on the concept of ballistic electron transport through a thin base is proposed. The method of transfer matrix was used in order to obtain tunneling probabilities, which were used in calculation of the forward and reverse current-voltage (I-V) characteristics, as well as of the transit time. It is demonstrated that by considering a potential in full form, a good agreement between the experimental and calculated I-V characteristics is obtained. It is found that a consideration of the role of a thin base causes the current to decrease; the probability of tunneling through the n-base can be close to unity. It is demonstrated that the tunneling probability has a large number of local resonances and that the energy dependence of the transit time is nonmonotonic. This is caused by the influence of the base region. The boundary operating frequency of diodes is evaluated and is found to be 10–100-fold higher than that obtained from the classical concept.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 106–112.
Original Russian Text Copyright © 2000 by Torkhov, Eremeev.
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Torkhov, N.A., Eremeev, S.V. Current transport in the Me-n-n + Schottky-barrier structures. Semiconductors 34, 108–114 (2000). https://doi.org/10.1134/1.1187953
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DOI: https://doi.org/10.1134/1.1187953