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Elastic strain and composition of self-assembled GeSi nanoislands on Si(001)

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

The growth of self-assembled Ge islands on Si(001) surface and changes in the island structure parameters in the course of subsequent annealing were studied. Island structures possessing a small (∼6%) scatter with respect to lateral dimensions and heights of the islands were obtained. The Raman spectra and X-ray diffraction data show evidence that silicon dissolves in the islands. The atomic fraction of Si in the resulting SixGe1−x solid solution was determined and the elastic strain in the islands was measured. It was found that annealing of the heterostructures with islands is accompanied by increasing Si fraction in the islands, which leads to changes in the island shape and size.

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Authors and Affiliations

  1. Institute of the Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod, 603600, Russia

    N. V. Vostokov, S. A. Gusev, I. V. Dolgov, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov & V. V. Postnikov

  2. Regional Center of Scanning-Probe Microscopy, Nizhegorodsk State University, Nizhnii Novgorod, 603600, Russia

    D. O. Filatov

Authors
  1. N. V. Vostokov
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  2. S. A. Gusev
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  3. I. V. Dolgov
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  4. Yu. N. Drozdov
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  5. Z. F. Krasil’nik
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  6. D. N. Lobanov
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  7. L. D. Moldavskaya
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  8. A. V. Novikov
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  9. V. V. Postnikov
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  10. D. O. Filatov
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Additional information

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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 8–12.

Original Russian Text Copyright © 2000 by Vostokov, Gusev, Dolgov, Drozdov, Krasil’nik, Lobanov, Moldavskaya, Novikov, Postnikov, Filatov.

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Vostokov, N.V., Gusev, S.A., Dolgov, I.V. et al. Elastic strain and composition of self-assembled GeSi nanoislands on Si(001). Semiconductors 34, 6–10 (2000). https://doi.org/10.1134/1.1187942

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  • DOI: https://doi.org/10.1134/1.1187942

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