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Ellipsometric study of ultrathin AlxGa1−x As layers

  • Semiconductors Structures, Interfaces, and Surfaces
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Abstract

A method for rapid monitoring of the parameters of thin-layer semiconductor structures by ellipsometry is proposed. The results of ellipsometric analysis of the material thickness and composition distribution in AlxGa1−x As films grown by low-temperature liquid-phase epitaxy (LPE) are presented. The ellipsometric data are compared to those obtained by the Raman scattering spectroscopy.

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Authors and Affiliations

  1. St. Petersburg State Institute of Precise Mechanics and Optics (Technical University), St. Petersburg, 197101, Russia

    M. V. Sukhorukova & I. A. Skorokhodova

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. P. Khvostikov

Authors
  1. M. V. Sukhorukova
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  2. I. A. Skorokhodova
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  3. V. P. Khvostikov
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 57–61.

Original Russian Text Copyright © 2000 by Sukhorukova, Skorokhodova, Khvostikov.

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Sukhorukova, M.V., Skorokhodova, I.A. & Khvostikov, V.P. Ellipsometric study of ultrathin AlxGa1−x As layers. Semiconductors 34, 56–60 (2000). https://doi.org/10.1134/1.1187946

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  • DOI: https://doi.org/10.1134/1.1187946

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