Abstract
An algorithm is proposed for evaluating the field dependence of the emission rate based on the form-function of optical transition. Experiment and calculations are carried out for the V Ga S As complex in a gallium arsenide crystal. The model proposed is compared with theoretical studies based on one-coordinate approximation. It is concluded that the one-coordinate model can be used to describe the field dependence of hole emission rate from the V Ga S As center.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 41–45.
Original Russian Text Copyright © 2000 by Bulyarski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Grushko, Zhukov.
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Bulyarskii, S.V., Grushko, N.S. & Zhukov, A.V. Field dependence of the rate of thermal emission of holes from the V Ga S As complex in gallium arsenide. Semiconductors 34, 40–44 (2000). https://doi.org/10.1134/1.1187958
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DOI: https://doi.org/10.1134/1.1187958