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Electrophysical properties of Hg1−x CdxTe crystals under hydrostatic pressure

  • Electronic and Optical Properties of Semiconductors
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Abstract

The electrophysical properties of Hg1− x CdxTe crystals subjected to hydrostatic pressure were studied by a noncontact method. It is shown that there exists the effect of irreversible change in the state of native lattice defects. A decrease in hole (acceptor) concentration and an increase in electron mobility are observed in the samples subjected to pressure.

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Authors and Affiliations

  1. Drogobych I. Franko State Pedagogical University, Drogobych, 293720, Ukraine

    I. V. Virt, V. D. Prozorovskii & D. I. Tsyutsyura

Authors
  1. I. V. Virt
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  2. V. D. Prozorovskii
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  3. D. I. Tsyutsyura
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 33–35.

Original Russian Text Copyright © 2000 by Virt, Prozorovskii, Tsyutsyura.

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Virt, I.V., Prozorovskii, V.D. & Tsyutsyura, D.I. Electrophysical properties of Hg1−x CdxTe crystals under hydrostatic pressure. Semiconductors 34, 32–34 (2000). https://doi.org/10.1134/1.1187956

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  • DOI: https://doi.org/10.1134/1.1187956

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