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Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions

  • Amorphous, Vitreous, and Porous Semiconductors
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Abstract

The influence of implantation of Si+ ions with energies of 30, 60, and 120 keV was studied on the dark conductivity, photoconductivity, hydrogen concentration, microstructure parameter, and special features of the ultrasoft X-ray emission spectra of a-Si:H films that were deposited at T s =300°C by the dc-MASD and rf-PECVD methods and that differed in initial structural characteristics.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    O. A. Golikova, A. N. Kuznetsov & V. Kh. Kudoyarova

  2. Elektron Central Research Institute, St. Petersburg, Russia

    I. N. Petrov

  3. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    É. P. Domashevskaya & V. A. Terekhov

Authors
  1. O. A. Golikova
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  2. A. N. Kuznetsov
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  3. V. Kh. Kudoyarova
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  4. I. N. Petrov
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  5. É. P. Domashevskaya
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  6. V. A. Terekhov
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 86–89.

Original Russian Text Copyright © 2000 by Golikova, Kuznetsov, Kudoyarova, Petrov, Domashevskaya, Terekhov.

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Golikova, O.A., Kuznetsov, A.N., Kudoyarova, V.K. et al. Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions. Semiconductors 34, 87–91 (2000). https://doi.org/10.1134/1.1187951

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  • DOI: https://doi.org/10.1134/1.1187951

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