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A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate

  • Physics of Semiconductor Devices
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Abstract

Spatially single-mode lasing in the wavelength range of 1.25–1.28 µm was accomplished in injection lasers on GaAs substrates. The peak output power is 110 mW at room temperature, and the differential quantum efficiency amounts to 37%. The active region of the laser is formed by an array of self-organizing InAs quantum dots.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat’eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov, P. S. Kop’ev & Zh. I. Alferov

  2. Institut für Festkörperphysik Technische Universität Berlin, D-10623, Berlin, Germany

    D. Bimberg

Authors
  1. S. S. Mikhrin
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  2. A. E. Zhukov
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  3. A. R. Kovsh
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  4. N. A. Maleev
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  5. V. M. Ustinov
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  6. Yu. M. Shernyakov
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  7. I. N. Kayander
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  8. E. Yu. Kondrat’eva
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  9. D. A. Livshits
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  10. I. S. Tarasov
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  11. M. V. Maksimov
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  12. A. F. Tsatsul’nikov
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  13. N. N. Ledentsov
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  14. P. S. Kop’ev
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  15. D. Bimberg
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  16. Zh. I. Alferov
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Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 117–120.

Original Russian Text Copyright © 2000 by Mikhrin, Zhukov, Kovsh, Maleev, Ustinov, Shernyakov, Kayander, Kondrat’eva, Livshits, Tarasov, Maksimov, Tsatsul’nikov, Ledentsov, Kop’ev, Bimberg, Alferov.

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Mikhrin, S.S., Zhukov, A.E., Kovsh, A.R. et al. A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate. Semiconductors 34, 119–121 (2000). https://doi.org/10.1134/1.1187954

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  • DOI: https://doi.org/10.1134/1.1187954

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