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Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures

  • Electronic and Optical Properties of Semiconductors
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Abstract

It was shown by the methods of X-ray diffraction and photoluminescence that the use of a thin intermediate recrystallized ZnTe layer between the ZnTe buffer layer obtained by molecular-beam epitaxy and GaAs substrate, as well as an increase in the thickness of the epilayer result in the improvement of the structure (enhancement of the mosaic size) and an increase in the intensity of exitonic bands. It is established that a number of characteristics of the I C1 bands with hν≈2.361 eV, which are observed in the samples with quantum wells and superlattices, differ from the corresponding features of the emission lines of free and bound excitons and those lines typical of dislocation-related radiation in II-VI single crystals. It is assumed that the I C1 band is associated with the subblocks boundaries, which comprise the mosaic structure of epitaxial layers.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 252028, Ukraine

    E. F. Venger, G. N. Semenova, N. E. Korsunskaya, V. P. Klad’ko, M. P. Semtsiv & L. V. Borkovskaya

  2. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924, Russia

    Yu. G. Sadof’ev

Authors
  1. E. F. Venger
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  2. Yu. G. Sadof’ev
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  3. G. N. Semenova
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  4. N. E. Korsunskaya
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  5. V. P. Klad’ko
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  6. M. P. Semtsiv
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  7. L. V. Borkovskaya
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 13–18.

Original Russian Text Copyright © 2000 by Venger, Sadof’ev, Semenova, Korsunskaya, Klad’ko, Semtsiv, Borkovskaya.

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Venger, E.F., Sadof’ev, Y.G., Semenova, G.N. et al. Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures. Semiconductors 34, 11–16 (2000). https://doi.org/10.1134/1.1187943

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  • DOI: https://doi.org/10.1134/1.1187943

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