Abstract
The band structure of AlxGa1−x N substitutional solid solution is calculated by the method of local model pseudopotential in the modified virtual-crystal approximation. This provides an opportunity to explain both the dependence of the energy gap value (E g ) on AlN concentration (x) and on temperature and the E g (x) bending. The dynamics of chemical bonds in this compounds is studied by analyzing the spatial distribution of valence electron charge. The results of calculations are in a good agreement with the experimental data.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 36–40.
Original Russian Text Copyright © 2000 by De\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\)buk, Vozny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Sletov.
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Deibuk, V.G., Voznyi, A.V. & Sletov, M.M. Band structure and spatial charge distribution in AlxGa1−x N. Semiconductors 34, 35–39 (2000). https://doi.org/10.1134/1.1187957
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DOI: https://doi.org/10.1134/1.1187957