Abstract
The depth-concentration profiles n(x) of 28Si implanted into semiinsulating GaAs (E 1=50 keV, F 1=8.75×1012 cm−2; E 2=75 keV, F 2=1.88×1012 cm−2) were studied by C-V measurements after the electron-beam annealing (P=7.6 W/cm2, t=10 s). Prior to annealing, the samples were coated with protective insulating films (SiO2:Sm; SiO2 deposited by monosilane oxidation, or Si3N4) or were not coated. It was found that the implant profiles observed upon the electron-beam annealing extend to deeper layers as compared to the calculated curves or the profiles upon thermal annealing (800°C, 30 min). The profile depth depends on the type of insulating coating. The maximum “broadening” was observed in the electron-beam-annealed GaAs without insulating coating, and the minimum, in the sample with a protective SiO2:Sm layer. The n(x) curves can be divided into two parts, adjacent to and distant from the interphase boundary. The diffusion parameters and the degree of electric activation of the implanted Si atoms are greater in the second region than in the first one. The experimental results are interpreted assuming the presence of thermoelastic stresses at the insulator-semiconductor boundary in GaAs.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 70–72.
Original Russian Text Copyright © 2000 by V. Ardyshev, M. Ardyshev, Khludkov.
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Ardyshev, V.M., Ardyshev, M.V. & Khludkov, S.S. Effect of the insulator-gallium arsenide boundary on the behavior of silicon in the course of radiation annealing. Semiconductors 34, 70–72 (2000). https://doi.org/10.1134/1.1187948
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DOI: https://doi.org/10.1134/1.1187948