Abstract
Kinetics of the decay of photoluminescence of Er impurity in the films of amorphous hydrogenated Si a-Si:H〈Er〉 was studied for the first time. The films were obtained either by cosputtering of Si and Er targets with the use of the technology of dc silane decomposition in a magnetic field (MASD) or by radio-frequency decomposition of silane. In the second case, an Er(TMHD)3 polymer powder was used as the source of Er. It is shown that, at room temperature, the a-Si:H〈Er〉 films obtained by the MASD method feature the characteristic times of Er photoluminescence decay equal to 10–15 µs, which is 20 times smaller than in the case of Er-doped crystalline Si (c-Si〈Er, O〉) as measured at liquid-nitrogen temperature. For the a-Si:H〈Er〉 films obtained by radio-frequency decomposition of silane, the decay times of Er photoluminescence amount to 2 µs. The difference in the photoluminescence decay times is related to dissimilarities in the local surroundings of Er atoms in the a-Si:H〈Er〉 films obtained by different methods.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 90–92.
Original Russian Text Copyright © 2000 by Terukov, Kudoyarova, Kon’kov, Konstantinova, Kamenev, Timoshenko.
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Terukov, E.I., Kudoyarova, V.K., Kon’kov, O.I. et al. The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon. Semiconductors 34, 92–94 (2000). https://doi.org/10.1134/1.1187952
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DOI: https://doi.org/10.1134/1.1187952