Abstract
GaAsn/AlAsm superlattices grown on the GaAs (311)A and (311)B surfaces by molecular-beam epitaxy were studied by Raman light scattering. The form of the Raman scattering tensor allowed the TO y and TO x modes to be separately observed using various scattering geometries (the y and x axes correspond to atomic displacements along and across facets formed on the (311)A surface, respectively). The TO1y and TO1x modes exhibited splitting in superlattices grown on a faceted GaAs(311)A surface. The degree of splitting increased for superlattices with an average GaAs layer thickness of 6 monoatomic layers and less. No splitting was observed for superlattices grown under the same conditions on the (311)B surface, which indicates that the splitting effect is probably due to the formation of GaAs quantum wires on the faceted (311)A surface.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 62–66.
Original Russian Text Copyright © 2000 by Volodin, Efremov, Preobrazhenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Semyagin, Bolotov, Sachkov.
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Volodin, V.A., Efremov, M.D., Preobrazhenskii’, V.V. et al. Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering. Semiconductors 34, 61–66 (2000). https://doi.org/10.1134/1.1187947
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DOI: https://doi.org/10.1134/1.1187947