1. Electrical properties of Zinc-Tin diarsenide (ZnSnAs₂) irradiated with H⁺ ions

   • V. N. Brudnyi
   • T. V. Vedernikova

   Electronic and Optical Properties of Semiconductors 28 April 2009 Pages: 413 - 415

2. I–V characteristic of p-n structures based on a continuous solid solutions (Si₂)_{1 − xx} (CdS) _x

   • A. S. Saidov
   • A. Yu. Leyderman
   • K. T. Kholikov

   Electronic and Optical Properties of Semiconductors 28 April 2009 Pages: 416 - 418

3. Optical and structural characteristics of Ga-doped ZnO films

   • O. A. Novodvorsky
   • L. S. Gorbatenko
   • K. D. Shcherbachev

   Electronic and Optical Properties of Semiconductors 28 April 2009 Pages: 419 - 424

4. Photoelectrochemical cells based on In₂S₃ single crystals

   • V. Yu. Rud’
   • Yu. V. Rud’
   • T. N. Ushakova

   Semiconductor Structures, Interfaces, and Surfaces 28 April 2009 Pages: 425 - 428

5. Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures

   • V. V. Kurylyuk
   • O. A. Korotchenkov

   Semiconductor Structures, Interfaces, and Surfaces 28 April 2009 Pages: 429 - 435

6. Current dependence of capacitance of germanium p ⁺-p junctions in the temperature range of 290–330 K

   • N. A. Shekhovtsov

   Semiconductor Structures, Interfaces, and Surfaces 28 April 2009 Pages: 436 - 439

7. Tunneling recombination in semiconductor structures with nanoscale disorder

   • S. V. Bulyarski
   • Yu. V. Rud’
   • O. A. Trifonov

   Semiconductor Structures, Interfaces, and Surfaces 28 April 2009 Pages: 440 - 446

8. Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In _x Ga_{1 − x} N/GaN quantum wells

   • M. M. Mezdrogina
   • V. V. Krivolapchuk
   • R. V. Kuz’min

   Low-Dimensional Systems 28 April 2009 Pages: 447 - 457

9. Drift velocity of electrons in quantum wells in high electric fields

   • V. G. Mokerov
   • I. S. Vasil’evskii
   • Č. Paškević

   Low-Dimensional Systems 28 April 2009 Pages: 458 - 462

10. Resonance enhancement of spin-polarized electron emission

    • L. G. Gerchikov
    • Yu. A. Mamaev
    • V. S. Mikhrin

    Low-Dimensional Systems 28 April 2009 Pages: 463 - 467

11. Visualization of localized photon modes of ZnO nanorods by scanning cathodoluminescence

    • A. N. Gruzintsev
    • G. A. Emelchenko
    • S. G. Romanov

    Low-Dimensional Systems 28 April 2009 Pages: 468 - 471

12. Effect of the number of pairs of the layers on the quality of the superlattices of the In _x Ga_{1 − x} As/GaAs/.../GaAs(001) type grown by molecular beam epitaxy under computer control

    • G. F. Kuznetsov

    Low-Dimensional Systems 28 April 2009 Pages: 472 - 479

13. Thermoelectric power in carbon nanotubes

    • A. V. Mavrinskiy
    • E. M. Baitinger

    Low-Dimensional Systems 28 April 2009 Pages: 480 - 484

14. Features of conductivity and photoconductivity of polymer composites containing heteropolynuclear M(II)/Cr(III) complexes

    • N. A. Davidenko
    • S. V. Dekhtyarenko
    • O. V. Tretyak

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 28 April 2009 Pages: 485 - 489

15. Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature

    • M. M. Sobolev
    • I. M. Gadzhiyev
    • E. L. Portnoi

    Physics of Semiconductor Devices 28 April 2009 Pages: 490 - 494

16. Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes

    • K. M. Aliev
    • I. K. Kamilov
    • N. S. Abakarova

    Physics of Semiconductor Devices 28 April 2009 Pages: 495 - 499

17. The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP

    • V. V. Kabanov
    • E. V. Lebiadok
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 28 April 2009 Pages: 500 - 504

18. High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings

    • P. A. Ivanov
    • I. V. Grekhov
    • A. S. Potapov

    Physics of Semiconductor Devices 28 April 2009 Pages: 505 - 507

19. Array of InGaAsSb light-emitting diodes (λ = 3.7 μm)

    • A. L. Zakheim
    • N. V. Zotova
    • A. E. Chernyakov

    Physics of Semiconductor Devices 28 April 2009 Pages: 508 - 513

20. AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs

    • S. A. Blokhin
    • A. V. Sakharov
    • M. Z. Shvarts

    Physics of Semiconductor Devices 28 April 2009 Pages: 514 - 518

21. High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement

    • A. Yu. Andreev
    • S. A. Zorina
    • I. S. Tarasov

    Physics of Semiconductor Devices 28 April 2009 Pages: 519 - 523

22. The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes

    • O. I. Rabinovich
    • V. P. Sushkov

    Physics of Semiconductor Devices 28 April 2009 Pages: 524 - 527

23. Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas

    • A. V. Antonov
    • V. I. Gavrilenko
    • W. Knap

    Physics of Semiconductor Devices 28 April 2009 Pages: 528 - 531

24. GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm

    • A. V. Aluev
    • A. Yu. Leshko
    • I. S. Tarasov

    Physics of Semiconductor Devices 28 April 2009 Pages: 532 - 536

25. AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f _max as high as 100 GHz

    • V. G. Mokerov
    • A. L. Kuznetsov
    • V. M. Ustinov

    Physics of Semiconductor Devices 28 April 2009 Pages: 537 - 543

26. Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique

    • L. A. Bakaleinikov
    • Ya. V. Domrachova
    • E. Yu. Flegontova

    Fabrication, Treatment, and Testing of Materials and Structures 28 April 2009 Pages: 544 - 549