Abstract
Spectral, current-voltage, and light-current characteristics of p-InAsSbP/n-InGaAsSb/n +-InAs narrow-gap diode structures with 130 × 130 μm lateral dimensions of active elements are presented. The 2D distribution of light emitted by the samples fabricated in the form of emitting flip-chip 1 × 4 arrays is examined, including analysis of the emission uniformity. The limiting effective temperature created by an emitter of this type is determined.
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Original Russian Text © A.L. Zakheim, N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, A.A. Usikova, A.E. Chernyakov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 531–536.
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Zakheim, A.L., Zotova, N.V., Il’inskaya, N.D. et al. Array of InGaAsSb light-emitting diodes (λ = 3.7 μm). Semiconductors 43, 508–513 (2009). https://doi.org/10.1134/S1063782609040198
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DOI: https://doi.org/10.1134/S1063782609040198