Abstract
The current dependence of differential capacitance of germanium p +-p junctions with the p-region resistivity of 45, 30, and 10 Ω cm is investigated in the temperature range of 290–350 K. It is shown that the current dependence of the p +-p-junction capacitance varies with an increasing junction temperature. At the temperature of 290 K, the capacitance decreases with an increasing reverse current, changes sign from positive to negative, and increases with the forward current. At 330 K, the capacitance decreases to the lowest positive value with an increasing reverse current and changes sign to negative with increasing the forward current. At 310 K, the p +-p-junction capacitance can change the sign from positive to negative with increasing the forward and reverse current. It is assumed that the positive and negative p +-p-junction capacitance is caused by the change in the junction-region charge by the external voltage.
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Original Russian Text © N.A. Shekhovtsov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 456–459.
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Shekhovtsov, N.A. Current dependence of capacitance of germanium p +-p junctions in the temperature range of 290–330 K. Semiconductors 43, 436–439 (2009). https://doi.org/10.1134/S106378260904006X
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DOI: https://doi.org/10.1134/S106378260904006X