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Electrical properties of Zinc-Tin diarsenide (ZnSnAs2) irradiated with H+ ions

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Abstract

The results of studying the electrical properties and isochronous annealing of p-ZnSnAs2 irradiated with H+ ions (energy E = 5 MeV, dose D = 2 × 1016 cm−2) are reported. The limiting electrical characteristics of irradiated material (the Hall coefficient R H (D)lim ≈ −4 × 103 cm3 C−1, conductivity σ (D)lim ≈ 2.9 × 10−2 Ω−1 cm−1, and the Fermi level position F lim ≈ 0.58 eV above the valence-band top at 300 K) are determined. The energy position of the “neutral” point for the ZnSnAs2 compound is calculated.

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Authors and Affiliations

  1. Tomsk State University, Tomsk, 634050, Russia

    V. N. Brudnyi & T. V. Vedernikova

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  1. V. N. Brudnyi
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  2. T. V. Vedernikova
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Correspondence to V. N. Brudnyi.

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Original Russian Text © V.N. Brudnyi, T.V. Vedernikova, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 433–435.

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Brudnyi, V.N., Vedernikova, T.V. Electrical properties of Zinc-Tin diarsenide (ZnSnAs2) irradiated with H+ ions. Semiconductors 43, 413–415 (2009). https://doi.org/10.1134/S1063782609040010

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  • DOI: https://doi.org/10.1134/S1063782609040010

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