Abstract
A model of generalized generation-recombination theory is proposed for semiconductors with nanoscale disorder. Application of the developed recombination model made it possible to determine the parameters characterizing localization of electronic states in semiconductors with different atomic compositions and positional ordering. It is shown that the spatial parameters of this localization are in the nanoscale range. For this reason, the main transport factor is the tunneling of the charge carrier; the electronic transitions between the allowed bands and states in the mobility gap also play an important role. On the basis of the study performed, it is concluded that only consideration of both factors yields adequate description of the electronic processes in the structures based on semiconductors with nanoscale disorder.
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S. V. Bulyarskii and N. S. Grushko, Zh. Éksp. Teor. Fiz. 118, 1222 (2000) [JETP 91, 945 (2000)].
W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
N. Mott and E. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979; Mir, Moscow, 1982).
F. T. Vas’ko and V. I. Pipa, Zh. Éksp. Teor. Fiz. 115, 1337 (1999) [JETP 88, 735 (1999)].
Yu. A. Aleshchenko, I. P. Kazakov, V. V. Kopaev, Yu. V. Kopaev, N. V. Kornyakov, and A. E. Tyurin, Pis’ma Zh. Éksp. Teor. Fiz. 69, 194 (1999) [JETP Lett. 69, 207 (1999)].
R. Rentzch and I. S. Slimac, Phys. Status Solidi A 43, 231 (1977).
R. A. Street, Adv. Phys. 30, 593 (1981).
S. D. Baranovskii, V. G. Karpov, and B. I. Shklovskii, Zh. Éksp. Teor. Fiz. 94, 278 (1988) [Sov. Phys. JETP 67, 588 (1988)].
S. V. Bulyarskii, N. S. Grushko, A. I. Somov, and A. V. Lakalin, Fiz. Tekh. Poluprovodn. 31, 1146 (1997) [Semiconductors 31, 983 (1998)].
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin, Fiz. Tekh. Poluprovodn. 32, 1193 (1998) [Semiconductors 32, 1065 (1997)].
S. V. Bulyarskii, M. O. Vorob’ev, N. S. Grushko, and A. V. Lakalin, Fiz. Tekh. Poluprovodn. 33, 733 (1999) [Semiconductors 33, 677 (1999)].
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin, Zav. Lab., No. 7, 25 (1997).
A. Chakraborty, St. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 86, 031901 (2005).
D. D. Nolte, J. Appl. Phys. 85, 6259 (1999).
S. V. Bulyarskii, Deep Centers of Nonemission Recombination in Light Emission Devices (Shtiintsa, Kishinev, 1987) [in Russian].
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Original Russian Text © S.V. Bulyarski, Yu.V. Rud’, L.N. Vostretsova, A.S. Kagarmanov, O.A. Trifonov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 460–466.
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Bulyarski, S.V., Rud’, Y.V., Vostretsova, L.N. et al. Tunneling recombination in semiconductor structures with nanoscale disorder. Semiconductors 43, 440–446 (2009). https://doi.org/10.1134/S1063782609040071
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DOI: https://doi.org/10.1134/S1063782609040071