Abstract
The resonance electroacoustic vibrations in the GaAs/AlGaAs-LiNbO3 hybrid structure with the slippery interface and the effect of redistribution of the two-dimensional electron gas density in the heterostructure by the induced piezoelectric fields are analyzed theoretically. The calculations are performed by the finite element method. The experimentally recorded time-resolved Raman spectra exhibit some specific features of the behavior of the LO-phonon-plasmon mode. The features are consistent with the theoretically calculated redistribution of the density of the electron gas.
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Original Russian Text © V.V. Kurylyuk, O.A. Korotchenkov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 449–455.
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Kurylyuk, V.V., Korotchenkov, O.A. Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures. Semiconductors 43, 429–435 (2009). https://doi.org/10.1134/S1063782609040058
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DOI: https://doi.org/10.1134/S1063782609040058