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High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement

  • Physics of Semiconductor Devices
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Abstract

Laser diodes with a wavelength of 808 nm obtained by the MOC-hydride epitaxy in a system of the AlGaAs alloys have been studied. Parameters of the laser diodes with symmetric narrow and asymmetric wide waveguides are compared. It is shown that the maximum optical power in these laser diodes is limited by the catastrophic optical degradation of the SiO2/Si mirrors. In laser diodes with a symmetric narrow waveguide, the maximum power was 3 W, and with an asymmetric wide waveguide, it was 6 W. It is shown that it is possible to increase the maximum optical power by using the barrier Si3N4 layer introduced between the cleavage of the laser diode and SiO2/Si insulator coatings. The power of a laser diode with the barrier Si3N4 layer and with the asymmetric wide waveguide was 8.5 W.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194 021, Russia

    S. A. Zorina, A. V. Lyutetskiy, A. V. Murashova, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov & I. S. Tarasov

  2. Polyus Research and Development Institute, ul. Vvedenskogo 3, Moscow, 117342, Russia

    A. Yu. Andreev, A. Yu. Leshko, A. A. Marmalyuk, A. A. Padalitsa, D. R. Sabitov, V. A. Simakov & K. Yu. Telegin

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  1. A. Yu. Andreev
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  2. S. A. Zorina
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  3. A. Yu. Leshko
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  4. A. V. Lyutetskiy
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  5. A. A. Marmalyuk
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  6. A. V. Murashova
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  7. T. A. Nalet
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  9. N. A. Pikhtin
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  11. V. A. Simakov
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  14. V. V. Shamakhov
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  15. I. S. Tarasov
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Correspondence to V. V. Shamakhov.

Additional information

Original Russian Text © A.Yu. Andreev, S.A. Zorina, A.Yu. Leshko, A.V. Lyutetskiy, A.A. Marmalyuk, A.V. Murashova, T.A. Nalet, A.A. Padalitsa, N.A. Pikhtin, D.R. Sabitov, V.A. Simakov, S.O. Slipchenko, K.Yu. Telegin, V.V. Shamakhov, I.S. Tarasov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 543–547.

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Andreev, A.Y., Zorina, S.A., Leshko, A.Y. et al. High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement. Semiconductors 43, 519–523 (2009). https://doi.org/10.1134/S1063782609040216

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  • DOI: https://doi.org/10.1134/S1063782609040216

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